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TECH BULLETIN SPOTLIGHT

 

IDENTIFYING DEFECTS AND DETERMINING ROOT CAUSES FOUND DURING THICK PHOTORESIST REMOVAL IN LEAD-FREE WLP

Two of the fastest growing segments of the integrated circuit (IC) packing industry are FlipChip (FC) and Wafer Level Packaging (WLP). The practice of incorporating FC or bump technology in devices is experiencing significant growth. The demand for WLPs is increasing due to their small form factor and the increased demand for portable products. Batch packaging offers cost reductions over packaging chips individually. Many FCs produced through WLP end up in system-in-package configurations, some are stacked while others are in planar arrangements.

Current developments in WLPs include changing from leaded solder to essentially field-unproven lead-free solders in order to be compliant with the recently-introduced Restrictions of Hazardous Substances (RoHS) directive. Advanced IC manufacturers and packing sub-contractors are implementing lead-free electroplating lines in their bumping facilities. Simplest process integration schemes have involved directly replacing the leaded solders with the lead-free equivalent while keeping all the up-stream and down-stream process steps the same. With the change in composition and plating parameters required by the lead-free electroplating process, several process steps are affected including, as examples, solder reflow which requires higher temperatures and tighter ranges when compared with eutectic solders, addition of new fluxes, and thick photoresist removal after the electroplating step.

The focus of this paper is identifying defects that are found during thick photoresist removal processes in lead-free wafer level packaging and determining the root causes. The defect type is metal residue after the field metal etch step. The metal residue is found on the wafer surface, particularly in fine pitch patterns and at the base of the solder bumps. Exploring the root cause reveals a complex puzzle.

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(a)  (b)

Figure 1. SEM images showing the white ring (a) 700 x, (b) 1800 x. The metal film propagates outward from the bump, over the copper field metal.

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